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| S amHop Microelectronics C orp. S T S 2611 F E B 25 2005 P -C hannel E nhancement Mode Field E ffect Trans is tor P R ODUC T S UMMAR Y V DS S -20V F E AT UR E S ( m W ) Max ID -2.8A R DS (ON) S uper high dense cell design for low R DS (ON). 90 @ V G S = -4.5V 150 @ V G S = -2.5V R ugged and reliable. S OT-26 package. 1 256 TS OP 6 Top View D D D G 1 2 3 6 5 4 D D S G 3 4 S AB S OL UTE MAXIMUM R ATINGS (TA=25 C unles s otherwis e noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit -20 12 -2.8 -11 -1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL CHAR ACTE R IS TICS Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W 1 S T S 2611 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -16V, VGS = 0V VGS = 12V, VDS =0V VDS = VGS, ID =-250uA VGS = -4.5V, ID = -2.5A VGS = -2.5V, ID = -1.0A VDS = -5V, VGS = -4.5V VDS = -5V, ID = -2.5A Min Typ C Max Unit -20 1 100 -0.5 -0.8 -1.5 75 -7 6 380 100 60 90 125 150 V uA nA V m-ohm m-ohm ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS = -20V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -10V, ID = -1A, VGS = -4.5V, R GE N = 6 ohm 7.5 10.9 27.3 22.5 3.6 ns ns ns ns nC nC nC VDS = -10V, ID = -2.5A, VGS = -4.5V 0.9 0.8 2 S T S 2611 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =-1.25A Min Typ Max Unit -0.81 -1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 15 -V G S =10V -V G S =4.5V -V G S =4V 25 C 12 -55 C T j=125 C 9 6 -I D, Drain C urrent(A) -V G S =3V 12 8 -V G S =2V -ID, Drain C urrent (A) 16 4 0 3 0 0.0 0 0.5 1 1.5 2 2.5 3 0.6 1.2 1.8 2.4 3.0 3.6 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 1000 800 600 400 200 0 C rs s 0 5 10 15 20 25 30 C is s F igure 2. Trans fer C haracteris tics V G S =-4.5V ID=-2.5A R DS (ON), On-R es is tance (Normalized) 1.8 1.4 1.0 0.6 0.2 0 C , C apacitance (pF ) C os s -50 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T S 2611 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.10 ID=-250uA 1.07 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 8 6 4 2 0 0 3 6 9 V DS =-5V 12 15 -Is , S ource-drain current (A) 10 10 2 0 0 0.6 0.8 1.0 T J =25 C 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 5 -ID, Drain C urrent (A) L im 4 3 2 1 0 0 VDS =-10V ID=-2.5A 10 (O RD S it N) 10 10 0m s ms 11 DC 1s 0.1 0.03 VGS =-4.5V S ingle P ulse T c=25 C 0.1 1 10 20 50 0.5 1 1.5 2 2.5 3 3.5 4 Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T S 2611 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 2611 TSOP6 Tape and Reel Data TSOP6 Carrier Tape TSOP6 Reel 7 S T S 2611 6 |
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